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SSM3K17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K17FU
High Speed Switching Applications Analog Switch Applications
* * * Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note) Tch Tstg Rating 50 7 100 200 150 150 -55~150 Unit V V mA mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-70 2-2E1E
Note: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6 mm x 3)
Weight: 6 mg (typ.)
0.6 mm 1.0 mm
Marking
3
Equivalent Circuit
3
DM
1
2
1
2
This transistor is a electrostatic sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth 1/2Yfs1/2 RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = 7 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 50 V, VGS = 0 VDS = 3 V, ID = 1 A VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 20 mA, VGS = 0~3 V, RG = 10 , RL = 150 Min 50 0.9 20 Typ. 40 12 22 7 3 7 100 40 Max 5 1 1.5 20 40 Unit A V A V mS pF pF pF ns
Switching Time Test Circuit
(a) Test circuit
3V 0 1 s VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source Ta = 25C OUT IN 50 10 RL VDD 0V 10%
(b) VIN
3V 90%
(c) VOUT
VDD
10% 90% tr ton toff tf
VDS (ON)
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ID - VDS
100 Common source Ta = 25C 80 5 4.5 4 60 1000 Common source 100 VDS = 3 V
ID - VGS
(mA)
(mA) ID Drain current
10
ID
Drain current
1 Ta = 150C
40
0.1 75C 0.01 25C -25C
20
VGS = 2.5 V
0 0
0.4
0.8
1.2
1.6
2
0.001 0
1
2
3
4
5
6
7
Drain-Source voltage VDS
(V)
Gate-Source voltage
VGS
(V)
RDS (ON) - ID
100 Common source 50 Ta = 25C 40 Common source ID = 10 mA
RDS (ON) - Ta
Drain-Source on resistance RDS (ON) ()
30
Drain-Source on resistance RDS (ON) ()
VGS = 2.5 V 4V
30 VGS = 2.5 V
10 5 3
20 4V 10
1 0.5
1
3
5
10
30
50
100
0 -50
0
50
100
150
Drain current
ID
(mA)
Ambient temperature Ta (C)
RDS (ON) - VGS
40 Common source Ta = 25C 30 500 Common source 300 VDS = 3 V Ta = 25C
iYfsi - ID
Forward transfer admittance iYfsi (mS)
8 10
Drain-Source on resistance RDS (ON) ()
100
20
100 mA 10 ID = 10 mA
50 30
0 0
2
4
6
10 1
3
5
10
30
50
100
Gate-Source voltage
VGS
(V)
Drain current
ID
(mA)
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Vth - Ta
2 Common source VDS = 3 V ID = 1A 50 30
C - VDS
Common source VGS = 0 V f = 1 MHz Ta = 25C 10
(V) Gate threshold voltage Vth
1.6
Capacitance C
1.2
(pF)
0.8
5 3
Ciss Coss
0.4 1 1 0 50 100 150
Crss
0 -50
3
5
10
30
50
100
Ambient temperature Ta (C)
Drain-Source voltage VDS
(V)
t - ID
1000 Common source 300 VGS = 0~3 V RG = 10 Ta = 25C tr toff tf 10 5 3 1 3 5 10 30 50 100 300 500 1000 500 ton 100 50 30 VDD = 3 V -250 Common source VGS = 0 V Ta = 25C D -150 G
IDR - VDS
(mA) Drain reverse current IDR
-200
Switching time
t
(ns)
-100
S
-50
Drain current
ID
(mA)
0 0
-0.4
-0.8
-1.2
-1.6
-2
Drain-Source voltage VDS
(V)
PD - Ta
250
(mW)
200
Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6 mm2 x 3)
PD Drain power dissipation
150 100 50 0 0
40
80
120
160
Ambient temperature Ta (C)
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RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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